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Starting with Solaris 2.6, many changes were made to the printing subsystem to make life easier for us. Unfortunately, this happened at the same time we were just getting used to the other new way of doing things. One major thing to remember is that this subsystem is not System V. Any remote machine attempting to print to a 2.6 or higher machine needs to refer to it as type BSD. For Solaris 2.6 and above, a file called the printers.conf, which seems to behave quite a bit like the old Berkeley Software Distribution (BSD) printcap file, was added. Here is a sample printers.conf file:

The Cam mate creates a special instance of either the Coincident or Tangent mate. Four conditions exist with the Cam mate:

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The HTTP-GET protocol encodes Web Service operation requests and arguments in the URL to the Web Service. The operation is coded as part of the URL string, and any arguments are coded as query string parameters appended to the base URL. For example: http://localhost/ctemp/ctemp.asmx/ctemp Temperature=32&FromUnits= _F&ToUnits=C This URL specifies the Web-addressable entry point for the CTemp Web Service (ctemp.asxm), including the method to be called (also named ctemp). The arguments to the ctemp method are passed as query string arguments to the method request. Similar to the way WSDL documents are generated and returned to requests for such information via a URL to the Web Service entry point file (the .asmx file), the HTTP-GET method of calling Web Service methods is handled by the WebService HandlerFactory class. This class takes the URL and query string parameters as input and translates them into a method call on the appropriate Web Service class implementation.

This relationship can be illustrated by dividing each hexagonal number as in Fig. 3.24. It can also be used to find the formula for the nth hexagonal number:

To recap, OU stands for organizational unit. In the Active Directory, the OU represents a partitioning of the domain, yes, but it is more than that. An OU holds security policy, and it is the location for delegating administrative authority (also known as delegation of control). Now and in the future, the Active Directory OU is going to be compared to the OUs of other directories, such as Novell Directory Services (NDS). Since the publishing of the Active Directory Services Interface (ADSI), the OU has already been slammed for not being a security principal. Of course, what is a spade in the hands of one gardener may be something else in the hands of another. Seasoned NT administrators may nd it dif cult to think in terms of another security principal to replace groups.

Now, as shown in Figure 15.9(b), if two micro strip lines with open-circuited quarter wavelength are connected between P1 and P2, P3, and P4 on this large ground surface, then the AC/RF voltage at points P1, P2, P3, and P4 becomes approximately equipotential, that is, vP1 = vP2 = vP3 = vP4 = 0. (15.24)

Figure 7.5. The absolute external quantum ef ciencies of CIGS/CdS and CIGS/CdZnS devices made with identical absorbers. [Reproduced with permission from Ref. 40. Copyright 2006 American Institute of Physics.]

The Failover Cluster Management console is available with Windows Server 2008 Enterprise Server and is the primary means by which you con gure clustering. Clustering allows a group (cluster) of servers to function as a single logical unit for failover capability.

Reliability Since ferroelectric memories are an emerging technology, statistical reliability levels have not been published The reliability of ferroelectric devices can be affected by leakage current through the ferroelectric material, catastrophic dielectric breakdown, time-dependent dielectric breakdown, and imprint Since ferroelectric materials used in integrated circuits are polycrystalline, typical electrical integrity is poorer than for amorphous materials, such as silicon nitride of the same film thickness The electrical integrity of the ferroelectric thin films is dependent on the specific ferroelectric material, processing sequences, thickness, and thermal annealing and crystallization temperatures With proper process design, ferroelectric memories can have high reliability levels Scaling Scaling of ferroelectric devices is related to the minimum ferroelectric-layer thickness and the inherent switching capability of the ferroelectric film The switching capability is relatively independent of the film thickness, but the electrical integrity is a strong function of the film thickness.

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